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ATP203
Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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相关PDF资料
ATP204-TL-H
MOSFET N-CH 30V 100A ATPAK
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MOSFET N-CH 40V 40A ATPAK
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ATP214-TL-H
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ATP216-TL-H
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相关代理商/技术参数
ATP204
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP204_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP204SM
功能描述:CRYSTAL 20.480 MHZ 20PF SMD RoHS:否 类别:晶体和振荡器 >> 晶体 系列:ATP-SM 标准包装:1 系列:ABLS2 类型:MHz 晶体 频率:3.579545MHz 频率稳定性:±30ppm 频率公差:±30ppm 负载电容:18pF ESR（等效串联电阻）:180 欧姆 工作模式:基谐 工作温度:-40°C ~ 85°C 额定值:- 安装类型:表面贴装 封装/外壳:HC49/US 尺寸/尺寸:0.449" L x 0.185" W（11.40mm x 4.70mm） 高度:0.130"（3.30mm） 包装:剪切带 (CT) 产品目录页面:1683 (CN2011-ZH PDF) 其它名称:535-9855-1
ATP204-TL-H
功能描述:MOSFET N-CH 30V 100A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ATP206
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP206_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP206-TL-H
功能描述:MOSFET N-CH 40V 40A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ATP207
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications